Part Number Hot Search : 
MB81416 F20C05C IDT54 6K2204K0 MAX2309 HT56R64 463B6 CSDA1DA
Product Description
Full Text Search
 

To Download ZXTN25100DG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 ZXTN25100DG
100V NPN high gain transistor in SOT223
Summary
BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m PD = 3.0W Complementary part number ZXTP19100CG
Description
Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
C
B
Features
* * * * * High power dissipation SOT223 package High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage
E
Applications
* * * * PSU start up circuit DC - DC converters Motor drive Relay, lamp and solenoid drive
E C C B Pinout - top view
Tape width (mm) 12 Quantity per reel 1000
Ordering information
Device ZXTN25100DGTA Reel size (inches) 7
Device marking
* ZXTN25 100D
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTN25100DG
Absolute maximum ratings
Parameter Collector-Base voltage Collector-Emitter voltage (forward blocking) Collector-Emitter voltage Emitter-Collector voltage (reverse blocking) Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25C(a) Linear derating factor Power dissipation at TA =25C(b) Linear derating factor Power dissipation at TA =25C(c) Linear derating factor Power dissipation at TA =25C(d) Linear derating factor Power dissipation at TC =25C(e) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 180 180 100 6 7 3 1 3.5 1.2 9.6 1.6 12.8 3 24 5.3 42 7.3 58 -55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to Junction to ambient(a) ambient(b) Symbol R JA R JA R JA R JA R JC Limit 104 78 42 23.5 16 Unit C/W C/W C/W C/W C/W
Junction to ambient(c) Junction to ambient(d) Junction to case(e)
NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mmounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
2
www.zetex.com
ZXTN25100DG
Thermal characteristics
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
3
www.zetex.com
ZXTN25100DG
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage (forward blocking) Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Collector-Emitter cut-off current Emitter-Base cut-off current Collector-Emitter saturation voltage Symbol BVCBO BVCEX BVCEO BVECX BVECO BVEBO ICBO ICEX IEBO VCE(sat) <1 120 80 215 200 1020 905 300 120 40 450 170 60 10 175 154 8.7 16.4 115 763 158 250 15 Min. 180 180 100 6 6 Typ. 220 220 130 8.2 8.7 Max. Unit V V V V V Conditions IC = 100A IC = 100A, RBE < 1k or -1V < VBC < 0.25V IC= 10mA (*) IE = 100A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100A IE = 100A VCB =180V VCB =180V, Tamb=100C VCE = 100V, RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V IC = 0.5A, IB = 10mA(*) IC = 1A, IB = 100mA(*) IC = 2.5A, IB = 250mA(*) IC = 3A, IB = 600mA(*) IC = 3A, IB = 600mA(*) IC = 3A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 0.5A, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 3A, VCE = 2V(*) MHz pF pF ns ns ns ns IC = 500mA, VCC =10V, IB1 = -IB2 = 50mA IC = 50mA, VCE = 10V f = 100MHz VEB = 0.5V, f = 1MHz(*) VCB = 10V, f = 1MHz(*)
7
8.3 <1 50 0.5 100 50 170 100 345 500 1100 1000 900
V nA A nA nA mV mV mV mV mV mV
Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio
VBE(sat) VBE(on) hFE
Transition frequency Input capacitance Output capacitance Delay time Rise time Storage time Fall time
fT Cibo Cobo td tr ts tf
NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
4
www.zetex.com
ZXTN25100DG
Typical characteristics
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
5
www.zetex.com
ZXTN25100DG
Intentionally left blank
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
6
www.zetex.com
ZXTN25100DG
Package outline - SOT223
Dim. A A1 A2 b b2 C
Millimeters Min. 0.02 1.55 0.66 2.90 0.23 Max. 1.80 0.10 1.65 0.84 3.10 0.33 -
Inches Min. 0.0008 0.0610 0.026 0.114 0.009 Max. 0.071 0.004 0.0649 0.033 0.122 0.013
Dim. D e e1 E E1 L
Millimeters Min. 6.30 Max. 6.70
Inches Min. 0.248 Max. 0.264
2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 1- December 2007
(c) Zetex Semiconductors plc 2007
7
www.zetex.com
ZXTN25100DG
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview" Future device intended for production at some point. Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
(c) 2007 Published by Zetex Semiconductors plc
Issue1- December 2007
(c) Zetex Semiconductors plc 2007
8
www.zetex.com


▲Up To Search▲   

 
Price & Availability of ZXTN25100DG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X